jan 200 9 . rev. 0 . w w w w br1300 br1300 br1300 br1300 3l2 3l2 3l2 3l2 cop yright @winsemi semiconductor co.,ltd.,all rights reserved t02-1 high high high high voltage voltage voltage voltage fast-switching fast-switching fast-switching fast-switching npn npn npn npn power power power power transistor transistor transistor transistor features features features features very high switching speed high voltage capability wide reverse bias soa built-in freewheeling diode general general general general description description description description this device is designed for high voltage, high speed switching characteristics required such as lighting ystem, switching mode power supply. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol parameter test conditions value units v ces collector-emitter voltage v be = 0 350 v v ceo collector-emitter voltage i b = 0 2 00 v v ebo emitter-base voltage i c = 0 7 .0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p = 5ms 1.5 a p c total dissipation at t c = 25 40 w t j operation junction temperature 150 t stg storage temperature - 40 ~ 150 thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter value units r j c thermal resistance junction to case 3.12 /w r j a thermal resistance junction to ambient 89 /w
2 / 5 . w w w w br1300 br1300 br1300 br1300 3l2 3l2 3l2 3l2 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical characteristics ( t c =25 unless otherwise noted) symbol parameter test conditions value units min typ max b v c b b b b o collector-base breakdown voltage ic= 1 ma,ie=0 35 0 v b v ceo collector-emitter breakdown voltage ic= 5 ma,ib=0 2 00 - - v v ce(sat) collector-emitter saturation voltage ic= 5 00ma,ib=100ma - - 0.8 v v be(sat) base-emitter saturation voltage ic=200ma,ib=100ma - - 1. 0 v i cbo collector-base cutoff current vcb= 3 50v,ie=0ma - - 10 0 a i ceo collector-emitter cutoff current vce= 2 00v,ib=0ma - - 5 0 a i ebo emitter - base cutoff current veb= 7 v,ic=0ma - - 20 a h fe dc current gain vce=20v,ic=20ma vce=5v, ic= 1.5 a 8 5 - - 40 - ts t f storage time fall time v cc =250v i c =5 i b i b1 =- i b2 =0.04a - - - - 3 0.8 ? note: note: note: note: pulse test : pulse width 300, duty cycle 2%
3 / 5 w w w w br1300 br1300 br1300 br1300 3l2 3l2 3l2 3l2 fig. 1 dc current gain fig. 2 saturation voltage fig. 3 switching time fig. 4 safe operation area fig.5 power derating
4 / 5 . w w w w br1300 br1300 br1300 br1300 3l2 3l2 3l2 3l2 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance resistive resistive resistive resistive load load load load switching switching switching switching test test test test circuit circuit circuit circuit inductive inductive inductive inductive load load load load switching switching switching switching & & & & rbsoa rbsoa rbsoa rbsoa test test test test circuit circuit circuit circuit
5 / 5 w w w w br1300 br1300 br1300 br1300 3l2 3l2 3l2 3l2 to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
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